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| Datasheet | SIE810DF-T1-E3 |
| File Size | 191.83 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIE810DF-T1-E3, SIE810DF-T1-GE3 |
| Description | MOSFET N-CH 20V 60A 10-POLARPAK, MOSFET N-CH 20V 60A POLARPAK |
SIE810DF-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 10V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 10V FET Feature - Power Dissipation (Max) 5.2W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PolarPAK® (L) Package / Case 10-PolarPAK® (L) |