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SIDC14D60C6Y Datasheet

SIDC14D60C6Y Cover
DatasheetSIDC14D60C6Y
File Size56.56 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIDC14D60C6Y, SIDC14D60C6
Description DIODE GEN PURP 600V 50A WAFER, DIODE GEN PURP 600V 50A WAFER

SIDC14D60C6Y - Infineon Technologies

SIDC14D60C6Y Datasheet Page 1
SIDC14D60C6Y Datasheet Page 2
SIDC14D60C6Y Datasheet Page 3
SIDC14D60C6Y Datasheet Page 4

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URL Link

SIDC14D60C6Y

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

50A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 50A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

27µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-40°C ~ 175°C

SIDC14D60C6

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

50A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 50A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

27µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Sawn on foil

Operating Temperature - Junction

-40°C ~ 175°C