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| Datasheet | SIDC11D60SIC3 |
| File Size | 54.39 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIDC11D60SIC3 |
| Description | DIODE SCHOTTKY 600V 4A WAFER |
SIDC11D60SIC3 - Infineon Technologies
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SIDC11D60SIC3 | Infineon Technologies | DIODE SCHOTTKY 600V 4A WAFER | 131 More on Order |
URL Link
www.oemstron.com/datasheet/SIDC11D60SIC3
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Manufacturer Infineon Technologies Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 4A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 150pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 175°C |