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| Datasheet | SIDC08D60C6Y |
| File Size | 58.52 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SIDC08D60C6Y, SIDC08D60C6 |
| Description | DIODE GEN PURP 600V 30A WAFER, DIODE GEN PURP 600V 30A WAFER |
SIDC08D60C6Y - Infineon Technologies
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A (DC) Voltage - Forward (Vf) (Max) @ If 1.95V @ 30A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A (DC) Voltage - Forward (Vf) (Max) @ If 1.95V @ 30A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -40°C ~ 175°C |