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| Datasheet | SIDC08D120H6X1SA1 |
| File Size | 70.53 KB |
| Total Pages | 4 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIDC08D120H6X1SA1 |
| Description | DIODE GEN PURP 1.2KV 10A WAFER |
SIDC08D120H6X1SA1 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/SIDC08D120H6X1SA1
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.6V @ 10A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 27µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction -55°C ~ 150°C |