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| Datasheet | SIB452DK-T1-GE3 |
| File Size | 229.41 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIB452DK-T1-GE3 |
| Description | MOSFET N-CH 190V 1.5A SC75-6 |
SIB452DK-T1-GE3 - Vishay Siliconix
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SIB452DK-T1-GE3 | Vishay Siliconix | MOSFET N-CH 190V 1.5A SC75-6 | 51892 More on Order |
URL Link
www.oemstron.com/datasheet/SIB452DK-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 190V Current - Continuous Drain (Id) @ 25°C 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 2.4Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 135pF @ 50V FET Feature - Power Dissipation (Max) 2.4W (Ta), 13W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-75-6L Single Package / Case PowerPAK® SC-75-6L |