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| Datasheet | SIA850DJ-T1-GE3 |
| File Size | 111.09 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA850DJ-T1-GE3 |
| Description | MOSFET N-CH 190V 0.95A SC70-6 |
SIA850DJ-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIA850DJ-T1-GE3
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Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 190V Current - Continuous Drain (Id) @ 25°C 950mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 3.8Ohm @ 360mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 90pF @ 100V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |