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SIA778DJ-T1-GE3 Datasheet

SIA778DJ-T1-GE3 Cover
DatasheetSIA778DJ-T1-GE3
File Size153.18 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SIA778DJ-T1-GE3
Description MOSFET 2N-CH 12V/20V SC70-6

SIA778DJ-T1-GE3 - Vishay Siliconix

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URL Link

SIA778DJ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V, 20V

Current - Continuous Drain (Id) @ 25°C

4.5A, 1.5A

Rds On (Max) @ Id, Vgs

29mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 6V

Power - Max

6.5W, 5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package

PowerPAK® SC-70-6 Dual