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| Datasheet | SIA445EDJT-T1-GE3 |
| File Size | 332.79 KB |
| Total Pages | 10 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA445EDJT-T1-GE3 |
| Description | MOSFET P-CH 20V 12A SC70-6 |
SIA445EDJT-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SIA445EDJT-T1-GE3
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Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 16.7mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 10V FET Feature - Power Dissipation (Max) 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |