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SIA444DJT-T4-GE3 Datasheet

SIA444DJT-T4-GE3 Cover
DatasheetSIA444DJT-T4-GE3
File Size1,122.14 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SIA444DJT-T4-GE3, SIA444DJT-T1-GE3
Description MOSFET N-CH 30V SMD, MOSFET N-CH 30V 12A SC-70

SIA444DJT-T4-GE3 - Vishay Siliconix

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SIA444DJT-T1-GE3 SIA444DJT-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 12A SC-70 180

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URL Link

SIA444DJT-T4-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 7.4A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6

SIA444DJT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 7.4A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SC-70-6 Single

Package / Case

PowerPAK® SC-70-6