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| Datasheet | SIA429DJT-T1-GE3 |
| File Size | 204.66 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SIA429DJT-T1-GE3 |
| Description | MOSFET P-CH 20V 12A SC-70 |
SIA429DJT-T1-GE3 - Vishay Siliconix
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SIA429DJT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC-70 | 8020 More on Order |
URL Link
www.oemstron.com/datasheet/SIA429DJT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 20.5mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 10V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6 |