Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI8816EDB-T2-E1 Datasheet

SI8816EDB-T2-E1 Cover
DatasheetSI8816EDB-T2-E1
File Size154.34 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8816EDB-T2-E1
Description MOSFET N-CH 30V MICRO FOOT

SI8816EDB-T2-E1 - Vishay Siliconix

SI8816EDB-T2-E1 Datasheet Page 1
SI8816EDB-T2-E1 Datasheet Page 2
SI8816EDB-T2-E1 Datasheet Page 3
SI8816EDB-T2-E1 Datasheet Page 4
SI8816EDB-T2-E1 Datasheet Page 5
SI8816EDB-T2-E1 Datasheet Page 6
SI8816EDB-T2-E1 Datasheet Page 7
SI8816EDB-T2-E1 Datasheet Page 8

The Products You May Be Interested In

SI8816EDB-T2-E1 SI8816EDB-T2-E1 Vishay Siliconix MOSFET N-CH 30V MICRO FOOT 114433

More on Order

URL Link

SI8816EDB-T2-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

109mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

195pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-Microfoot

Package / Case

4-XFBGA