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SI8481DB-T1-E1 Datasheet

SI8481DB-T1-E1 Cover
DatasheetSI8481DB-T1-E1
File Size154.3 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI8481DB-T1-E1
Description MOSFET P-CH 20V 9.7A 4-MICROFOOT

SI8481DB-T1-E1 - Vishay Siliconix

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SI8481DB-T1-E1 SI8481DB-T1-E1 Vishay Siliconix MOSFET P-CH 20V 9.7A 4-MICROFOOT 500

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URL Link

SI8481DB-T1-E1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen III

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

21mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-MICRO FOOT® (1.6x1.6)

Package / Case

4-UFBGA