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| Datasheet | SI8407DB-T2-E1 |
| File Size | 119.61 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI8407DB-T2-E1 |
| Description | MOSFET P-CH 20V 5.8A 2X2 6-MFP |
SI8407DB-T2-E1 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI8407DB-T2-E1
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 900mV @ 350µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.47W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-Micro Foot™ (2.4x2) Package / Case 6-MICRO FOOT®CSP |