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SI7998DP-T1-GE3 Datasheet

SI7998DP-T1-GE3 Cover
DatasheetSI7998DP-T1-GE3
File Size390.99 KB
Total Pages18
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7998DP-T1-GE3
Description MOSFET 2N-CH 30V 25A PPAK SO-8

SI7998DP-T1-GE3 - Vishay Siliconix

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SI7998DP-T1-GE3 SI7998DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 25A PPAK SO-8 3770

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URL Link

SI7998DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A, 30A

Rds On (Max) @ Id, Vgs

9.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

Power - Max

22W, 40W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual