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| Datasheet | SI7956DP-T1-E3 |
| File Size | 305.5 KB |
| Total Pages | 12 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7956DP-T1-E3, SI7956DP-T1-GE3 |
| Description | MOSFET 2N-CH 150V 2.6A PPAK SO-8, MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
SI7956DP-T1-E3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 2.6A Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 2.6A Rds On (Max) @ Id, Vgs 105mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |