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SI7858BDP-T1-GE3 Datasheet

SI7858BDP-T1-GE3 Cover
DatasheetSI7858BDP-T1-GE3
File Size344.12 KB
Total Pages13
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI7858BDP-T1-GE3
Description MOSFET N-CH 12V 40A PPAK SO-8

SI7858BDP-T1-GE3 - Vishay Siliconix

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SI7858BDP-T1-GE3 SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A PPAK SO-8 158

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URL Link

SI7858BDP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

5760pF @ 6V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8