Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI7421DN-T1-E3 Datasheet

SI7421DN-T1-E3 Cover
DatasheetSI7421DN-T1-E3
File Size528.37 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI7421DN-T1-E3, SI7421DN-T1-GE3
Description MOSFET P-CH 30V 6.4A 1212-8, MOSFET P-CH 30V 6.4A PPAK 1212-8

SI7421DN-T1-E3 - Vishay Siliconix

SI7421DN-T1-E3 Datasheet Page 1
SI7421DN-T1-E3 Datasheet Page 2
SI7421DN-T1-E3 Datasheet Page 3
SI7421DN-T1-E3 Datasheet Page 4
SI7421DN-T1-E3 Datasheet Page 5
SI7421DN-T1-E3 Datasheet Page 6
SI7421DN-T1-E3 Datasheet Page 7
SI7421DN-T1-E3 Datasheet Page 8
SI7421DN-T1-E3 Datasheet Page 9
SI7421DN-T1-E3 Datasheet Page 10
SI7421DN-T1-E3 Datasheet Page 11
SI7421DN-T1-E3 Datasheet Page 12

The Products You May Be Interested In

SI7421DN-T1-E3 SI7421DN-T1-E3 Vishay Siliconix MOSFET P-CH 30V 6.4A 1212-8 207

More on Order

SI7421DN-T1-GE3 SI7421DN-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 6.4A PPAK 1212-8 15451

More on Order

URL Link

SI7421DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SI7421DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8