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| Datasheet | SI7100DN-T1-GE3 |
| File Size | 544.61 KB |
| Total Pages | 14 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI7100DN-T1-GE3, SI7100DN-T1-E3 |
| Description | MOSFET N-CH 8V 35A PPAK 1212-8, MOSFET N-CH 8V 35A 1212-8 |
SI7100DN-T1-GE3 - Vishay Siliconix
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3810pF @ 4V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 105nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 3810pF @ 4V FET Feature - Power Dissipation (Max) 3.8W (Ta), 52W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8 |