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SI6968BEDQ-T1-GE3 Datasheet

SI6968BEDQ-T1-GE3 Cover
DatasheetSI6968BEDQ-T1-GE3
File Size227.98 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI6968BEDQ-T1-GE3, SI6968BEDQ-T1-E3
Description MOSFET 2N-CH 20V 5.2A 8-TSSOP, MOSFET 2N-CH 20V 5.2A 8TSSOP

SI6968BEDQ-T1-GE3 - Vishay Siliconix

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SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 5.2A 8TSSOP 4535

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URL Link

SI6968BEDQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A

Rds On (Max) @ Id, Vgs

22mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6968BEDQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A

Rds On (Max) @ Id, Vgs

22mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP