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| Datasheet | SI5980DU-T1-GE3 |
| File Size | 112.57 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5980DU-T1-GE3 |
| Description | MOSFET 2N-CH 100V 2.5A CHIPFET |
SI5980DU-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI5980DU-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 567mOhm @ 400mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 78pF @ 50V Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® ChipFET™ Dual Supplier Device Package PowerPAK® ChipFet Dual |