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SI5935DC-T1-GE3 Datasheet

SI5935DC-T1-GE3 Cover
DatasheetSI5935DC-T1-GE3
File Size112.26 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5935DC-T1-GE3, SI5935DC-T1-E3
Description MOSFET 2P-CH 20V 3A 1206-8, MOSFET 2P-CH 20V 3A 1206-8

SI5935DC-T1-GE3 - Vishay Siliconix

SI5935DC-T1-GE3 Datasheet Page 1
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SI5935DC-T1-GE3 Datasheet Page 3
SI5935DC-T1-GE3 Datasheet Page 4
SI5935DC-T1-GE3 Datasheet Page 5
SI5935DC-T1-GE3 Datasheet Page 6

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URL Link

SI5935DC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

86mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

SI5935DC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

86mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™