Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI5858DU-T1-GE3 Datasheet

SI5858DU-T1-GE3 Cover
DatasheetSI5858DU-T1-GE3
File Size114.58 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI5858DU-T1-GE3, SI5858DU-T1-E3
Description MOSFET N-CH 20V 6A PPAK CHIPFET, MOSFET N-CH 20V 6A PPAK CHIPFET

SI5858DU-T1-GE3 - Vishay Siliconix

SI5858DU-T1-GE3 Datasheet Page 1
SI5858DU-T1-GE3 Datasheet Page 2
SI5858DU-T1-GE3 Datasheet Page 3
SI5858DU-T1-GE3 Datasheet Page 4
SI5858DU-T1-GE3 Datasheet Page 5
SI5858DU-T1-GE3 Datasheet Page 6
SI5858DU-T1-GE3 Datasheet Page 7
SI5858DU-T1-GE3 Datasheet Page 8
SI5858DU-T1-GE3 Datasheet Page 9
SI5858DU-T1-GE3 Datasheet Page 10

The Products You May Be Interested In

SI5858DU-T1-GE3 SI5858DU-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 6A PPAK CHIPFET 304

More on Order

SI5858DU-T1-E3 SI5858DU-T1-E3 Vishay Siliconix MOSFET N-CH 20V 6A PPAK CHIPFET 446

More on Order

URL Link

SI5858DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.3W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Dual

Package / Case

PowerPAK® ChipFET™ Dual

SI5858DU-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

2.3W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Dual

Package / Case

PowerPAK® ChipFET™ Dual