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| Datasheet | SI5855DC-T1-E3 |
| File Size | 126.68 KB |
| Total Pages | 7 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI5855DC-T1-E3 |
| Description | MOSFET P-CH 20V 2.7A 1206-8 |
SI5855DC-T1-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI5855DC-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 110mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds - FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead |