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SI5853CDC-T1-E3 Datasheet

SI5853CDC-T1-E3 Cover
DatasheetSI5853CDC-T1-E3
File Size130.81 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI5853CDC-T1-E3
Description MOSFET P-CH 20V 4A 1206-8

SI5853CDC-T1-E3 - Vishay Siliconix

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URL Link

SI5853CDC-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

104mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.5W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead