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SI5402BDC-T1-GE3 Datasheet

SI5402BDC-T1-GE3 Cover
DatasheetSI5402BDC-T1-GE3
File Size112.89 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI5402BDC-T1-GE3
Description MOSFET N-CH 30V 4.9A 1206-8

SI5402BDC-T1-GE3 - Vishay Siliconix

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SI5402BDC-T1-GE3 SI5402BDC-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.9A 1206-8 423

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URL Link

SI5402BDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead