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SI4914BDY-T1-E3 Datasheet

SI4914BDY-T1-E3 Cover
DatasheetSI4914BDY-T1-E3
File Size205.52 KB
Total Pages14
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4914BDY-T1-E3, SI4914BDY-T1-GE3
Description MOSFET 2N-CH 30V 8.4A 8-SOIC, MOSFET 2N-CH 30V 8.4A 8-SOIC

SI4914BDY-T1-E3 - Vishay Siliconix

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The Products You May Be Interested In

SI4914BDY-T1-E3 SI4914BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC 169

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SI4914BDY-T1-GE3 SI4914BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8.4A 8-SOIC 245

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URL Link

SI4914BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.4A, 8A

Rds On (Max) @ Id, Vgs

21mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2.7W, 3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

SI4914BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.4A, 8A

Rds On (Max) @ Id, Vgs

21mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

2.7W, 3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO