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SI4845DY-T1-E3 Datasheet

SI4845DY-T1-E3 Cover
DatasheetSI4845DY-T1-E3
File Size104.86 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4845DY-T1-E3
Description MOSFET P-CH 20V 2.7A 8-SOIC

SI4845DY-T1-E3 - Vishay Siliconix

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URL Link

SI4845DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

210mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

312pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.75W (Ta), 2.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)