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| Datasheet | SI4776DY-T1-GE3 |
| File Size | 204.32 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4776DY-T1-GE3 |
| Description | MOSFET N-CHANNEL 30V 11.9A 8SO |
SI4776DY-T1-GE3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI4776DY-T1-GE3
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Manufacturer Vishay Siliconix Series SkyFET®, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 521pF @ 15V FET Feature - Power Dissipation (Max) 4.1W (Tc) Operating Temperature -55°C ~ 150°C (TA) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |