Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI4453DY-T1-GE3 Datasheet

SI4453DY-T1-GE3 Cover
DatasheetSI4453DY-T1-GE3
File Size85.58 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI4453DY-T1-GE3, SI4453DY-T1-E3
Description MOSFET P-CH 12V 10A 8-SOIC, MOSFET P-CH 12V 10A 8-SOIC

SI4453DY-T1-GE3 - Vishay Siliconix

SI4453DY-T1-GE3 Datasheet Page 1
SI4453DY-T1-GE3 Datasheet Page 2
SI4453DY-T1-GE3 Datasheet Page 3
SI4453DY-T1-GE3 Datasheet Page 4
SI4453DY-T1-GE3 Datasheet Page 5
SI4453DY-T1-GE3 Datasheet Page 6

The Products You May Be Interested In

SI4453DY-T1-GE3 SI4453DY-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 10A 8-SOIC 134

More on Order

SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix MOSFET P-CH 12V 10A 8-SOIC 121

More on Order

URL Link

SI4453DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 600µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI4453DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 14A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 600µA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)