Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI4401FDY-T1-GE3 |
| File Size | 239.61 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI4401FDY-T1-GE3 |
| Description | MOSFET P-CHAN 40V SO-8 |
SI4401FDY-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI4401FDY-T1-GE3 | Vishay Siliconix | MOSFET P-CHAN 40V SO-8 | 6877 More on Order |
URL Link
www.oemstron.com/datasheet/SI4401FDY-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® Gen III FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |