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SI4286DY-T1-GE3 Datasheet

SI4286DY-T1-GE3 Cover
DatasheetSI4286DY-T1-GE3
File Size189.66 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI4286DY-T1-GE3
Description MOSFET 2N-CH 40V 7A 8SO

SI4286DY-T1-GE3 - Vishay Siliconix

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URL Link

SI4286DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7A

Rds On (Max) @ Id, Vgs

32.5mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

375pF @ 20V

Power - Max

2.9W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO