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SI3983DV-T1-GE3 Datasheet

SI3983DV-T1-GE3 Cover
DatasheetSI3983DV-T1-GE3
File Size105.95 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3983DV-T1-GE3, SI3983DV-T1-E3
Description MOSFET 2P-CH 20V 2.1A 6-TSOP, MOSFET 2P-CH 20V 2.1A 6-TSOP

SI3983DV-T1-GE3 - Vishay Siliconix

SI3983DV-T1-GE3 Datasheet Page 1
SI3983DV-T1-GE3 Datasheet Page 2
SI3983DV-T1-GE3 Datasheet Page 3
SI3983DV-T1-GE3 Datasheet Page 4
SI3983DV-T1-GE3 Datasheet Page 5
SI3983DV-T1-GE3 Datasheet Page 6

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URL Link

SI3983DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

SI3983DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A

Rds On (Max) @ Id, Vgs

110mOhm @ 2.5A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP