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| Datasheet | SI3911DV-T1-E3 |
| File Size | 103.53 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | SI3911DV-T1-E3 |
| Description | MOSFET 2P-CH 20V 1.8A 6TSOP |
SI3911DV-T1-E3 - Vishay Siliconix
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URL Link
www.oemstron.com/datasheet/SI3911DV-T1-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.8A Rds On (Max) @ Id, Vgs 145mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |