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SI3853DV-T1-GE3 Datasheet

SI3853DV-T1-GE3 Cover
DatasheetSI3853DV-T1-GE3
File Size121.03 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3853DV-T1-GE3, SI3853DV-T1-E3
Description MOSFET P-CH 20V 1.6A 6-TSOP, MOSFET P-CH 20V 1.6A 6-TSOP

SI3853DV-T1-GE3 - Vishay Siliconix

SI3853DV-T1-GE3 Datasheet Page 1
SI3853DV-T1-GE3 Datasheet Page 2
SI3853DV-T1-GE3 Datasheet Page 3
SI3853DV-T1-GE3 Datasheet Page 4
SI3853DV-T1-GE3 Datasheet Page 5
SI3853DV-T1-GE3 Datasheet Page 6
SI3853DV-T1-GE3 Datasheet Page 7

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URL Link

SI3853DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

830mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI3853DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.8A, 4.5V

Vgs(th) (Max) @ Id

500mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

830mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6