Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | SI3850ADV-T1-GE3 |
| File Size | 116.27 KB |
| Total Pages | 9 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | SI3850ADV-T1-GE3, SI3850ADV-T1-E3 |
| Description | MOSFET N/P-CH 20V 1.4A 6-TSOP, MOSFET N/P-CH 20V 1.4A 6TSOP |
SI3850ADV-T1-GE3 - Vishay Siliconix
The Products You May Be Interested In
 |
SI3850ADV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1.4A 6-TSOP | 242 More on Order |
 |
SI3850ADV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 1.4A 6TSOP | 237 More on Order |
URL Link
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A, 960mA Rds On (Max) @ Id, Vgs 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.08W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A, 960mA Rds On (Max) @ Id, Vgs 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.08W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |