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SI3499DV-T1-E3 Datasheet

SI3499DV-T1-E3 Cover
DatasheetSI3499DV-T1-E3
File Size204.26 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3499DV-T1-E3, SI3499DV-T1-GE3
Description MOSFET P-CH 8V 5.3A 6-TSOP, MOSFET P-CH 8V 5.3A 6-TSOP

SI3499DV-T1-E3 - Vishay Siliconix

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SI3499DV-T1-E3 SI3499DV-T1-E3 Vishay Siliconix MOSFET P-CH 8V 5.3A 6-TSOP 419

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SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 5.3A 6-TSOP 15116

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URL Link

SI3499DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

750mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI3499DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

750mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 4.5V

Vgs (Max)

±5V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6