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SI3460DV-T1-GE3 Datasheet

SI3460DV-T1-GE3 Cover
DatasheetSI3460DV-T1-GE3
File Size181.5 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI3460DV-T1-GE3, SI3460DV-T1-E3
Description MOSFET N-CH 20V 5.1A 6TSOP, MOSFET N-CH 20V 5.1A 6TSOP

SI3460DV-T1-GE3 - Vishay Siliconix

SI3460DV-T1-GE3 Datasheet Page 1
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SI3460DV-T1-GE3 Datasheet Page 9

The Products You May Be Interested In

SI3460DV-T1-GE3 SI3460DV-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 5.1A 6TSOP 376

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SI3460DV-T1-E3 SI3460DV-T1-E3 Vishay Siliconix MOSFET N-CH 20V 5.1A 6TSOP 114

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URL Link

SI3460DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI3460DV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6