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SI2337DS-T1-GE3 Datasheet

SI2337DS-T1-GE3 Cover
DatasheetSI2337DS-T1-GE3
File Size255.25 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI2337DS-T1-GE3, SI2337DS-T1-E3
Description MOSFET P-CH 80V 2.2A SOT23-3, MOSFET P-CH 80V 2.2A SOT23-3

SI2337DS-T1-GE3 - Vishay Siliconix

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The Products You May Be Interested In

SI2337DS-T1-GE3 SI2337DS-T1-GE3 Vishay Siliconix MOSFET P-CH 80V 2.2A SOT23-3 4553

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SI2337DS-T1-E3 SI2337DS-T1-E3 Vishay Siliconix MOSFET P-CH 80V 2.2A SOT23-3 59074

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URL Link

SI2337DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

270mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 40V

FET Feature

-

Power Dissipation (Max)

760mW (Ta), 2.5W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2337DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

2.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

270mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

500pF @ 40V

FET Feature

-

Power Dissipation (Max)

760mW (Ta), 2.5W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3