Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI2323DS-T1 Datasheet

SI2323DS-T1 Cover
DatasheetSI2323DS-T1
File Size196.12 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts SI2323DS-T1, SI2323DS-T1-GE3, SI2323DS-T1-E3
Description MOSFET P-CH 20V 3.7A SOT23, MOSFET P-CH 20V 3.7A SOT23-3, MOSFET P-CH 20V 3.7A SOT23-3

SI2323DS-T1 - Vishay Siliconix

SI2323DS-T1 Datasheet Page 1
SI2323DS-T1 Datasheet Page 2
SI2323DS-T1 Datasheet Page 3
SI2323DS-T1 Datasheet Page 4
SI2323DS-T1 Datasheet Page 5
SI2323DS-T1 Datasheet Page 6
SI2323DS-T1 Datasheet Page 7
SI2323DS-T1 Datasheet Page 8
SI2323DS-T1 Datasheet Page 9

The Products You May Be Interested In

SI2323DS-T1 SI2323DS-T1 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23 116

More on Order

SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 20318

More on Order

SI2323DS-T1-E3 SI2323DS-T1-E3 Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 93583

More on Order

URL Link

SI2323DS-T1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 10V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2323DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 10V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2323DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1020pF @ 10V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3