Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI2316DS-T1-GE3 Datasheet

SI2316DS-T1-GE3 Cover
DatasheetSI2316DS-T1-GE3
File Size210.3 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI2316DS-T1-GE3, SI2316DS-T1-E3
Description MOSFET N-CH 30V 2.9A SOT23-3, MOSFET N-CH 30V 2.9A SOT23-3

SI2316DS-T1-GE3 - Vishay Siliconix

SI2316DS-T1-GE3 Datasheet Page 1
SI2316DS-T1-GE3 Datasheet Page 2
SI2316DS-T1-GE3 Datasheet Page 3
SI2316DS-T1-GE3 Datasheet Page 4
SI2316DS-T1-GE3 Datasheet Page 5
SI2316DS-T1-GE3 Datasheet Page 6
SI2316DS-T1-GE3 Datasheet Page 7
SI2316DS-T1-GE3 Datasheet Page 8

The Products You May Be Interested In

SI2316DS-T1-GE3 SI2316DS-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 2.9A SOT23-3 255

More on Order

SI2316DS-T1-E3 SI2316DS-T1-E3 Vishay Siliconix MOSFET N-CH 30V 2.9A SOT23-3 54438

More on Order

URL Link

SI2316DS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

215pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2316DS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

50mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

800mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

215pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3