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SI2308CDS-T1-GE3 Datasheet

SI2308CDS-T1-GE3 Cover
DatasheetSI2308CDS-T1-GE3
File Size235.13 KB
Total Pages9
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI2308CDS-T1-GE3
Description MOSFET N-CH 60V 2.6A SOT23-3

SI2308CDS-T1-GE3 - Vishay Siliconix

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SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 2.6A SOT23-3 180

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URL Link

SI2308CDS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

144mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

105pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3