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SI2302ADS-T1-GE3 Datasheet

SI2302ADS-T1-GE3 Cover
DatasheetSI2302ADS-T1-GE3
File Size204.1 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts SI2302ADS-T1-GE3, SI2302ADS-T1, SI2302ADS-T1-E3
Description MOSFET N-CH 20V 2.1A SOT23-3, MOSFET N-CH 20V 2.1A SOT23-3, MOSFET N-CH 20V 2.1A SOT23-3

SI2302ADS-T1-GE3 - Vishay Siliconix

SI2302ADS-T1-GE3 Datasheet Page 1
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SI2302ADS-T1-GE3 Datasheet Page 8

The Products You May Be Interested In

SI2302ADS-T1-GE3 SI2302ADS-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 2.1A SOT23-3 472

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SI2302ADS-T1 SI2302ADS-T1 Vishay Siliconix MOSFET N-CH 20V 2.1A SOT23-3 247

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SI2302ADS-T1-E3 SI2302ADS-T1-E3 Vishay Siliconix MOSFET N-CH 20V 2.1A SOT23-3 492

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URL Link

SI2302ADS-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2302ADS-T1

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

SI2302ADS-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3