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SI1958DH-T1-E3 Datasheet

SI1958DH-T1-E3 Cover
DatasheetSI1958DH-T1-E3
File Size125.96 KB
Total Pages7
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1958DH-T1-E3
Description MOSFET 2N-CH 20V 1.3A SC70-6

SI1958DH-T1-E3 - Vishay Siliconix

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SI1958DH-T1-E3 SI1958DH-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 1.3A SC70-6 266

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URL Link

SI1958DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

205mOhm @ 1.3A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

105pF @ 10V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)