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SI1912EDH-T1-E3 Datasheet

SI1912EDH-T1-E3 Cover
DatasheetSI1912EDH-T1-E3
File Size115.48 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1912EDH-T1-E3
Description MOSFET 2N-CH 20V 1.13A SC70-6

SI1912EDH-T1-E3 - Vishay Siliconix

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SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 1.13A SC70-6 146

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URL Link

SI1912EDH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.13A

Rds On (Max) @ Id, Vgs

280mOhm @ 1.13A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 100µA (Min)

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

570mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)