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SI1480DH-T1-GE3 Datasheet

SI1480DH-T1-GE3 Cover
DatasheetSI1480DH-T1-GE3
File Size248.94 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1480DH-T1-GE3
Description MOSFET N-CH 100V 2.6A SOT-363

SI1480DH-T1-GE3 - Vishay Siliconix

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SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 2.6A SOT-363 14585

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URL Link

SI1480DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 50V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363