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SI1431DH-T1-GE3 Datasheet

SI1431DH-T1-GE3 Cover
DatasheetSI1431DH-T1-GE3
File Size99.52 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts SI1431DH-T1-GE3, SI1431DH-T1-E3
Description MOSFET P-CH 30V 1.7A SOT363, MOSFET P-CH 30V 1.7A SOT363

SI1431DH-T1-GE3 - Vishay Siliconix

SI1431DH-T1-GE3 Datasheet Page 1
SI1431DH-T1-GE3 Datasheet Page 2
SI1431DH-T1-GE3 Datasheet Page 3
SI1431DH-T1-GE3 Datasheet Page 4
SI1431DH-T1-GE3 Datasheet Page 5
SI1431DH-T1-GE3 Datasheet Page 6

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SI1431DH-T1-GE3 SI1431DH-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 1.7A SOT363 476

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SI1431DH-T1-E3 SI1431DH-T1-E3 Vishay Siliconix MOSFET P-CH 30V 1.7A SOT363 180

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URL Link

SI1431DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

950mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

SI1431DH-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

950mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363