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SI1422DH-T1-GE3 Datasheet

SI1422DH-T1-GE3 Cover
DatasheetSI1422DH-T1-GE3
File Size266.2 KB
Total Pages12
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1422DH-T1-GE3
Description MOSFET N-CH 12V 4A SC70-6

SI1422DH-T1-GE3 - Vishay Siliconix

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URL Link

SI1422DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

26mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

725pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.56W (Ta), 2.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363