Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

SI1411DH-T1-GE3 Datasheet

SI1411DH-T1-GE3 Cover
DatasheetSI1411DH-T1-GE3
File Size267.03 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1411DH-T1-GE3
Description MOSFET P-CH 150V 420MA SC70

SI1411DH-T1-GE3 - Vishay Siliconix

SI1411DH-T1-GE3 Datasheet Page 1
SI1411DH-T1-GE3 Datasheet Page 2
SI1411DH-T1-GE3 Datasheet Page 3
SI1411DH-T1-GE3 Datasheet Page 4
SI1411DH-T1-GE3 Datasheet Page 5
SI1411DH-T1-GE3 Datasheet Page 6
SI1411DH-T1-GE3 Datasheet Page 7
SI1411DH-T1-GE3 Datasheet Page 8
SI1411DH-T1-GE3 Datasheet Page 9
SI1411DH-T1-GE3 Datasheet Page 10
SI1411DH-T1-GE3 Datasheet Page 11

The Products You May Be Interested In

SI1411DH-T1-GE3 SI1411DH-T1-GE3 Vishay Siliconix MOSFET P-CH 150V 420MA SC70 7725

More on Order

URL Link

SI1411DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

420mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-363

Package / Case

6-TSSOP, SC-88, SOT-363