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SI1403CDL-T1-GE3 Datasheet

SI1403CDL-T1-GE3 Cover
DatasheetSI1403CDL-T1-GE3
File Size240.15 KB
Total Pages11
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts SI1403CDL-T1-GE3
Description MOSFET P-CH 20V 2.1A SC-70-6

SI1403CDL-T1-GE3 - Vishay Siliconix

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SI1403CDL-T1-GE3 SI1403CDL-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.1A SC-70-6 334

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URL Link

SI1403CDL-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

281pF @ 10V

FET Feature

-

Power Dissipation (Max)

600mW (Ta), 900mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363